Magneto-Electric Spin-Orbit
Magneto-Electric Spin-Orbit is a technology for constructing scalable integrated circuits. MESO devices operate by the coupling of the Magnetoelectric effect with the spin orbit coupling effect. Specifically, the mangetoelectric effect will induce a change in Magnetization within the device due to an induced electric field, which can then be read out by the spin orbit coupling component. This mechanism is analogous to how a CMOS device operates with the source, gate and drain electrodes work together to form a logic gate. Compared to CMOS, MESO circuits require less energy for switching, lower operating voltage, and feature a higher integration density, making them ideal candidates to replace CMOS based devices in the future. The technology is currently in development by Intel and University of California, Berkeley.
| Feature Size | Supply Voltage | Switching Energy |
| CMOS | 10 | 100 - 700 | 300x10−18 |
| MESO | 10 | 10 - 100 | 10x10−18 |
