Indium gallium arsenide phosphide
Indium gallium arsenide phosphide is a quaternary compound semiconductor material, an alloy of gallium arsenide and indium phosphide. This compound has applications in photonic devices, due to the ability to tailor its band gap via changes in the alloy mole ratios, x and y.
Indium phosphide-based photonic integrated circuits, or PICs, commonly use alloys of x1−xy1−y to construct quantum wells, waveguides and other photonic structures, lattice matched to an InP substrate, enabling single-crystal epitaxial growth onto InP.
Many devices operating in the near-infrared 1.55 μm wavelength window utilize this alloy, and are employed as optical components in C-band communications systems.
